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Item Details
Title: ANALYSIS AND DESIGN OF MOSFETS
MODELING, SIMULATION, AND PARAMETER EXTRACTION
By: J.J. Liou, Adelmo Ortiz-Conde, Francisco Garcia-Sanchez
Format: Hardback

List price: £149.99


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ISBN 10: 0412146010
ISBN 13: 9780412146015
Publisher: CHAPMAN AND HALL
Pub. date: 30 September, 1998
Edition: 1998 ed.
Pages: 349
Description: Devoted to the spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). This book is extensively referenced, and contains more than 180 illustrations.
Synopsis: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Illustrations: XIV, 349 p.
Publication: UK
Imprint: Chapman and Hall
Returns: Returnable
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