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Title: EARLY STAGES OF OXYGEN PRECIPITATION IN SILICON
PROCEEDINGS OF THE NATO ADVANCED RESEARCH WORKSHOP, EXETER, U.K., MARCH 26-29 1996
By: Richard G. Jones (Editor)
Format: Hardback

List price: £72.00


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ISBN 10: 0792342968
ISBN 13: 9780792342960
Publisher: KLUWER ACADEMIC PUBLISHERS
Pub. date: 31 October, 1996
Series: NATO Science Partnership Subseries 3: High Technology v. 17
Pages: 552
Description: This text discusses recent results on the vibrational spectroscopy of thermal donors, the enhanced diffusion of oxygen dimers, magnetic resonance, theoretical modelling, and the influence of H on oxygen diffusion.
Synopsis: Important findings are emerging from the careful monitoring of the changes in IR lattice absorption spectra over long time periods, observation of the growth of new bands that are correlated with electronic IR data, and high resolution ENDOR studies. Better samples are also becoming available for study, and great advances have been made in modelling techniques. The emphasis of the present book is on the fundamental issues of oxygen diffusion, the properties of small oxygen aggregates, and the effects of H, N, and C on oxygen precipitation. This text presents the proceedings of the confernece, discussing recent results on the vibrational spectroscopy of thermal donors, the enhanced diffusion of oxygen dimers, magnetic resonance, theoretical modelling, and the influence of H on oxygen diffusion.
Illustrations: biography
Publication: US
Imprint: Kluwer Academic Publishers
Returns: Returnable
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