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Item Details
Title: HF-BASED HIGH-K DIELECTRICS
PROCESS DEVELOPMENT, PERFORMANCE CHARACTERIZATION, AND RELIABILITY
By: Young Hee Kim, Jack C. Lee, Sanjay Banerjee
Format: Paperback

List price: £35.95


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ISBN 10: 1598290045
ISBN 13: 9781598290042
Publisher: MORGAN & CLAYPOOL PUBLISHERS
Pub. date: 10 March, 2005
Series: Synthesis Lectures on Solid State Materials and Devices
Pages: 92
Description: Chip density and performance have been driven by scaling of semiconductor devices. This book tells how SiO2 gate dielectrics have reached its minimum thickness due to direct tunneling current and reliability concerns. Therefore, high-k dielectrics attracted more attention from industries as the replacement of conventional SiO2 gate dielectrics.
Synopsis: In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru-Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.
Illustrations: black & white illustrations
Publication: US
Imprint: Morgan & Claypool Publishers
Returns: Non-returnable
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