MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN by Carlos Galup-Montoro, Marcio Cherem Schneider ( 9789812568106 )

Item Details

Title:

MOSFET MODELING FOR CIRCUIT ANALYSIS AND DESIGN

By:

Carlos Galup-Montoro, Marcio Cherem Schneider

Format:

Hardback

List price:

£140.00

Our price:

£126.00

Discount:

10% off

You save:

£14.00

ISBN 10:

9812568107

ISBN 13:

9789812568106

Availability:

Reprinting. This item may be subject to delays or cancellation.

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Stock:

Currently 0 available

Publisher:

WORLD SCIENTIFIC PUBLISHING CO PTE LTD

Pub. date:

1 March, 2007

Series:

International Series On Advances In Solid State Electronics And Technology 0

Pages:

448

Description:

Addressed to circuit designers with a treatment that appeals to device specialists, this book presents a view of compact modeling. It provides both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models.

Synopsis:

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.

Publication:

Singapore

Imprint:

World Scientific Publishing Co Pte Ltd

Returns:

Returnable

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