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Item Details
| Title:
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LEAKAGE IN NANOMETER CMOS TECHNOLOGIES
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| By: |
Siva G. Narendra (Editor), Anantha P. Chandrakasan (Editor) |
| Format: |
Hardback |
| List price:
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£179.99 |
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We currently do not stock this item, please contact the publisher directly for
further information.
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| ISBN 10: |
0387257373 |
| ISBN 13: |
9780387257372 |
| Publisher: |
SPRINGER-VERLAG NEW YORK INC. |
| Pub. date: |
17 November, 2005 |
| Series: |
Integrated Circuits and Systems |
| Pages: |
308 |
| Description: |
Covers promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. This title highlights different device design choices that exist to mitigate increases in the leakage components as technology scales. |
| Synopsis: |
Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles. Also treated are the resulting effects so the reader understands the effectiveness of leakage power reduction solutions under these different conditions. Case studies supply real-world examples that reap the benefits of leakage power reduction solutions as the book highlights different device design choices that exist to mitigate increases in the leakage components as technology scales. |
| Illustrations: |
X, 308 p. |
| Publication: |
US |
| Imprint: |
Springer-Verlag New York Inc. |
| Returns: |
Returnable |
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