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Item Details
Title: NONLINEAR TRANSISTOR MODEL PARAMETER EXTRACTION TECHNIQUES
By: Christian Fager (Editor), David E. Root (Editor), Matthias Rudolph (Editor)
Format: Hardback

List price: £118.00
Our price: £103.25
Discount:
12.5% off
You save: £14.75
ISBN 10: 0521762103
ISBN 13: 9780521762106
Availability: Usually dispatched within 1-3 weeks.
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Publisher: CAMBRIDGE UNIVERSITY PRESS
Pub. date: 13 October, 2011
Series: The Cambridge RF and Microwave Engineering Series
Pages: 366
Description: Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Synopsis: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Illustrations: 273 b/w illus. 10 tables
Publication: UK
Imprint: Cambridge University Press
Returns: Returnable
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