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Item Details
Title: POWER SEMICONDUCTOR MATERIALS AND DEVICES: VOLUME 483
By: S. J. Pearton (Editor), R. J. Shul (Editor), E. Wolfgang (Editor)
Format: Paperback

List price: £22.00


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ISBN 10: 1107413419
ISBN 13: 9781107413412
Publisher: CAMBRIDGE UNIVERSITY PRESS
Pub. date: 5 June, 2014
Series: MRS Proceedings
Pages: 476
Description: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Synopsis: IInnovative silicon concepts and nonsilicon materials such as SiC, diamond and group-III nitrides are finding interest for new generations of electronic devices operational at much higher voltages and temperatures than conventional lower-power transistors and integrated circuits. Improved bulk and epitaxial growth, processing, device design and circuit architecture, bonding, testing and packaging are all necessary for realization of new applications. It seems clear that Si will continue to dominate most power electronics applications for the next decade, while SiC is by far the most mature of the newer materials technologies. The group-III nitrides are also extremely attractive because of their excellent transport properties and the availability of heterostructures. It is likely that hybrid GaN/SiC devices will have a role due to the need for high thermal conductivity substrates for thermal management. Diamond appears to be trailing because of the inability to dope with donor impurities, although in principle, its properties are probably better suited to high-temperature applications than many other materials.
Illustrations: black & white illustrations
Publication: UK
Imprint: Cambridge University Press
Returns: Returnable
Some other items by this author:
ADVANCED III-V COMPOUND SEMICONDUCTOR GROWTH, PROCESSING AND DEVICES (HB)
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COMPOUND SEMICONDUCTOR ELECTRONICS AND PHOTONICS: VOLUME 421 (HB)
DEFECTS IN ELECTRONIC MATERIALS: VOLUME 104 (HB)
DEFECTS IN ELECTRONIC MATERIALS: VOLUME 104 (PB)
DEGRADATION MECHANISMS IN III-V COMPOUND SEMICONDUCTOR DEVICES AND STRUCTURES (HB)
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GALLIUM NITRIDE PROCESSING FOR ELECTRONICS, SENSORS AND SPINTRONICS (HB)
GAN AND RELATED ALLOYS: VOLUME 537 (HB)
GAN AND RELATED MATERIALS (PB)
HANDBOOK OF ADVANCED PLASMA PROCESSING TECHNIQUES (HB)
HANDBOOK OF ADVANCED PLASMA PROCESSING TECHNIQUES (PB)
HYDROGEN IN COMPOUND SEMICONDUCTORS (HB)
HYDROGEN IN CRYSTALLINE SEMICONDUCTORS (HB)
HYDROGEN IN CRYSTALLINE SEMICONDUCTORS (PB)
III-V ELECTRONIC AND PHOTONIC DEVICE FABRICATION AND PERFORMANCE: VOLUME 300 (HB)
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INP HBTS (HB)
POWER SEMICONDUCTOR MATERIALS AND DEVICES: VOLUME 483 (HB)
PROCEEDINGS OF THE 11TH EUROPEAN SYMPOSIUM ON THE RELIABILITY OF ELECTRON DEVICES, FAILURE PHYSICS AND ANALYSIS (CD)
PROCESSING OF 'WIDE BAND GAP SEMICONDUCTORS (HB)
RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS: VOLUME 1195 (HB)
TOPICS IN GROWTH AND DEVICE PROCESSING OF III-V SEMICONDUCTORS (HB)
WIDE-BANDGAP ELECTRONIC DEVICES (HB)
ZINC OXIDE BULK, THIN FILMS AND NANOSTRUCTURES (HB)

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