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Item Details
Title: NANOSCALE MEMORY REPAIR
By: Masashi Horiguchi, Kiyoo Itoh
Format: Paperback

List price: £89.99


We currently do not stock this item, please contact the publisher directly for further information.

ISBN 10: 1461427940
ISBN 13: 9781461427940
Publisher: SPRINGER-VERLAG NEW YORK INC.
Pub. date: 24 February, 2013
Edition: 2011 ed.
Series: Integrated Circuits and Systems
Pages: 218
Description: Written from years of experience with developing memories and low-voltage CMOS circuits, Nanoscale Memory Repair describes yield and reliability issues in terms of mathematics and engineering. Readers will find a detailed explanation of the various yield models and calculations.
Synopsis: Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors' long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.
Illustrations: X, 218 p.
Publication: US
Imprint: Springer-Verlag New York Inc.
Returns: Returnable
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