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Item Details
Title: SPECTROSCOPY OF SEMICONDUCTOR MICROSTRUCTURES
By: Gerhard Fasol (Editor), Annalisa Fasolino (Editor), Paolo Lugli (Editor)
Format: Paperback

List price: £54.99


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ISBN 10: 1475765673
ISBN 13: 9781475765670
Publisher: SPRINGER-VERLAG NEW YORK INC.
Pub. date: 3 March, 2013
Edition: Softcover reprint of the original 1st ed. 1989
Series: NATO Science Series B 206
Pages: 667
Description: Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Synopsis: IDES have been realized in modulation doped AIGaAs/GaAs heterostructures by fabricating split-gate configurations and ultrafine etched structures with optimized lithography and etching techniques. With deep-mesa etching technique it is possible to prepare single and multi-layered quantum wire systems. From dc magnetotransport typical confinement energies of 2me V are determined. The FIR response is strongly governed by collective effects which give the resonances the character of local plasmon modes. In multi-layered quantum wire structures a splitting of the plasmon dispersion in longitudinal and acoustical type of layer-coupled local plasmon modes is observed. ACKNOWLEDGEMENT We would like to thank K Ploog for providing us with excellent samples and acknowledge financial support from the Bundesministerium fur Forschung und Tech- nologie, Bonn. REFERENCES 1K-F. Berggren, T. J. Thornton, D. J. Newson, and M. Pepper, Phys. Rev. Lett. 57, 1769 (1986) 2H. van Houten, B. J. van Wees, M. G. J. Heijman, J. P. Andre, D. Andrews, and G. J. Davies, Appl. Phys. Lett. 49, 1781 (1986) 3J. Cibert, P. M. Petroff, G. J. Dolan, S. J. Pearton, A. C. Gossard, and J. H. English, Appl. Phys. Lett.49, 1275 (1986) 4T. P. Smith, III. , H. Arnot, J. M. Hong, C. M. Knoedler, S. E. Laux, and H. Schmid, Phys. Rev. Lett. 59, 2802 (1987) 5M. L. Roukes, A. Scherer, S. J. Allen, Jr. , H. G. Craighead, R. M. Ruthen, E. D. Beebe, and J. P. Harbison, Phys. Rev. Lett.
Illustrations: 215 Illustrations, black and white; XIV, 667 p. 215 illus.
Publication: US
Imprint: Springer-Verlag New York Inc.
Returns: Returnable
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