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Item Details
Title: GAN AND RELATED ALLOYS--2000
SYMPOSIUM HELD NOVEMBER 26-DECEMBER 1, 2000, BOSTON, MASSACHUSETTS, U.S.A
By: Christian M. Wetzel (Editor), M. S. Shur (Editor), Umesh K. Mishra (Editor)
Format: Hardback

List price: £27.99


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ISBN 10: 1558995498
ISBN 13: 9781558995499
Publisher: MATERIALS RESEARCH SOCIETY
Pub. date: 4 September, 2001
Series: MRS Proceedings
Pages: 967
Description: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Synopsis: This year's nitride proceedings provides an integrated view of advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. The devices discussed include high-frequency, high-power, and high-temperature devices as well as light-emitting diodes, laser diodes, and UV photodetectors. Challenges and goals for the advancement of this field include the further optimization and stabilization of growth processes, and growth of GaInN, AlGaN, AlInN, and quaternary layers. The book captures the most exciting developments of this field, and should prove useful for both researchers and students of this novel science and technology. Topics include: advances in growth; advanced alloys and characterization; growth and characterization; dopants and processing; lateral epitaxy and growth; optical properties and light emitters; electronic transport and quantum dots; characterization and bandstructure; quantum dots and photo detectors; electronic properties and transport; light emitters and strain control and light emitters and electronic devices.
Illustrations: illustrations
Publication: US
Imprint: Materials Research Society
Returns: Returnable
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