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Item Details
| Title:
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SPIN TRANSFER TORQUE (STT) BASED DEVICES, CIRCUITS, AND MEMORY
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| By: |
Brajesh Kumar Kaushik |
| Format: |
Hardback |
| List price:
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£143.00 |
| Our price: |
£78.65 |
| Discount: |
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| You save:
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£64.35 |
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| ISBN 10: |
1630810916 |
| ISBN 13: |
9781630810917 |
| Availability: |
Usually dispatched within 1-2 days.
 Delivery
rates
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| Stock: |
Currently 2 available |
| Publisher: |
ARTECH HOUSE PUBLISHERS |
| Pub. date: |
31 October, 2016 |
| Pages: |
310 |
| Description: |
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. |
| Synopsis: |
This first-of-its-kind resource is completely dedicated to spin transfer torque (STT) based devices, circuits, and memory. A wide range of topics including, STT MRAMs, MTJ based logic circuits, simulation and modeling strategies, fabrication of MTJ CMOS circuits, non-volatile computing with STT MRAMs, all spin logic, and spin information processing are explored. State-of-the-art modeling and simulation strategies of spin transfer torque based devices and circuits in a lucid manner are covered. Professional engineers find practical guidance in the development of micro-magnetic models of spin-torque based devices in object-oriented micro-magnetic framework (OOMMF) and compact modeling of STT based magnetic tunnel junctions in Verilog-A.The performance parameters and design aspects of STT MRAMs and MTJ based hybrid spintronic CMOS circuits are covered and case studies are presented demonstrating STT-MRAM design and simulation with a detailed analysis of results. The fundamental physics of STT based devices are presented with an emphasis on new advancements from recent years.Advanced topics are also explored including, micromagnetic simulations, multi-level STT MRAMs, giant spin Hall Effect (GSHE) based MRAMs, non-volatile computing, all spin logic and all spin information processing. |
| Publication: |
US |
| Imprint: |
Artech House Publishers |
| Returns: |
Non-returnable |
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