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Item Details
Title: OXYGEN IN SILICON
Volume: v. 42
By: Robert K. Willardson, Eicke R. Weber, Albert C. Beer
Format: Hardback

List price: £210.00


We currently do not stock this item, please contact the publisher directly for further information.

ISBN 10: 0127521429
ISBN 13: 9780127521428
Publisher: ELSEVIER SCIENCE PUBLISHING CO INC
Pub. date: 15 August, 1994
Series: Semiconductors and Semimetals v. 42
Pages: 679
Description: Reviews the understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. This work covers the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.
Synopsis: This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. The key features: comprehensive study of the behavior of oxygen in silicon; silicon crystals for VLSI and ULSI applications are discussed; thorough coverage from crystal growth to device fabrication; edited by technical experts in the field; written by recognized authorities from industrial and academic institutions; useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research; and 297 original line drawings.
Illustrations: 297 line drawings, index
Publication: US
Imprint: Academic Press Inc
Returns: Non-returnable
Some other items by this author:
ADVANCES IN PHOTOVOLTAICS: PART 1 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 2 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 3 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 4 (HB)
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES: VOLUME 148 (PB)
CUMULATIVE SUBJECT AND AUTHOR INDEX INCLUDING TABLES OF CONTENTS, VOLUMES 1-50 (HB)
EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS: OPTICAL AND PHOTOTHERMAL CHARACTERIZATION (HB)
FROM PHYSICS TO DEVICES: LIGHT EMISSIONS IN SILICON (HB)
GERMANIUM SILICON: PHYSICS AND MATERIALS (HB)
HIGH BRIGHTNESS LIGHT EMITTING DIODES (HB)
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II (HB)
HIGH PRESSURE SEMICONDUCTOR PHYSICS I (HB)
HIGH SPEED HETEROSTRUCTURE DEVICES (HB)
HYDROGEN IN SEMICONDUCTORS II (HB)
IDENTIFICATION OF DEFECTS IN SEMICONDUCTORS (HB)
MATERIALS SCIENCE AND TECHNOLOGY (PB)
NONLINEAR OPTICS IN SEMICONDUCTORS I (HB)
NONLINEAR OPTICS IN SEMICONDUCTORS II (HB)
PREDICTIVE SIMULATION OF SEMICONDUCTOR PROCESSING (HB)
PREDICTIVE SIMULATION OF SEMICONDUCTOR PROCESSING (PB)
PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS (HB)
QUANTUM EFFICIENCY IN COMPLEX SYSTEMS, PART I (HB)
QUANTUM EFFICIENCY IN COMPLEX SYSTEMS, PART II: FROM MOLECULAR AGGREGATES TO ORGANIC SOLAR CELLS (HB)
SELF-ASSEMBLED INGAAS/GAAS QUANTUM DOTS (HB)
SEMICONDUCTORS FOR ROOM TEMPERATURE NUCLEAR DETECTOR APPLICATIONS (HB)
SIC MATERIALS AND DEVICES (HB)
UNCOOLED INFRARED IMAGING ARRAYS AND SYSTEMS (HB)

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