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Item Details
Title: EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS: OPTICAL AND PHOTOTHERMAL CHARACTERIZATION
Volume: Volume 46
By: Robert K. Willardson, Eicke R. Weber, Constantinos Christofides (Editor)
Format: Hardback

List price: £160.00


We currently do not stock this item, please contact the publisher directly for further information.

ISBN 10: 0127521461
ISBN 13: 9780127521466
Publisher: ELSEVIER SCIENCE PUBLISHING CO INC
Pub. date: 5 June, 1997
Series: Semiconductors and Semimetals
Pages: 316
Description: Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.
Synopsis: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented.
Publication: US
Imprint: Academic Press Inc
Returns: Non-returnable
Some other items by this author:
ADVANCES IN PHOTOVOLTAICS: PART 1 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 2 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 3 (HB)
ADVANCES IN PHOTOVOLTAICS: PART 4 (HB)
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES: VOLUME 148 (PB)
CUMULATIVE SUBJECT AND AUTHOR INDEX INCLUDING TABLES OF CONTENTS, VOLUMES 1-50 (HB)
DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS (HB)
DEVICE AND CIRCUIT CRYOGENIC OPERATION FOR LOW TEMPERATURE ELECTRONICS (PB)
FROM PHYSICS TO DEVICES: LIGHT EMISSIONS IN SILICON (HB)
GERMANIUM SILICON: PHYSICS AND MATERIALS (HB)
HIGH BRIGHTNESS LIGHT EMITTING DIODES (HB)
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS II (HB)
HIGH PRESSURE SEMICONDUCTOR PHYSICS I (HB)
HIGH SPEED HETEROSTRUCTURE DEVICES (HB)
HYDROGEN IN SEMICONDUCTORS II (HB)
IDENTIFICATION OF DEFECTS IN SEMICONDUCTORS (HB)
MATERIALS SCIENCE AND TECHNOLOGY (PB)
NONLINEAR OPTICS IN SEMICONDUCTORS I (HB)
NONLINEAR OPTICS IN SEMICONDUCTORS II (HB)
OXYGEN IN SILICON (HB)
PHYSICS AND CHEMISTRY OF SOLID STATE GAS SENSOR DEVICES (HB)
PREDICTIVE SIMULATION OF SEMICONDUCTOR PROCESSING (HB)
PREDICTIVE SIMULATION OF SEMICONDUCTOR PROCESSING (PB)
PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS (HB)
QUANTUM EFFICIENCY IN COMPLEX SYSTEMS, PART I (HB)
QUANTUM EFFICIENCY IN COMPLEX SYSTEMS, PART II: FROM MOLECULAR AGGREGATES TO ORGANIC SOLAR CELLS (HB)
SELF-ASSEMBLED INGAAS/GAAS QUANTUM DOTS (HB)
SEMICONDUCTORS FOR ROOM TEMPERATURE NUCLEAR DETECTOR APPLICATIONS (HB)
SIC MATERIALS AND DEVICES (HB)
UNCOOLED INFRARED IMAGING ARRAYS AND SYSTEMS (HB)

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