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Item Details
Title: SEMICONDUCTOR PROCESS RELIABILITY IN PRACTICE
By: Zhenghao Gan, Waisum Wong, Juin J. Liou
Format: Hardback

List price: £147.99
Our price: £133.19
Discount:
10% off
You save: £14.80
ISBN 10: 007175427X
ISBN 13: 9780071754279
Availability: Usually dispatched within 1-3 weeks.
 Delivery rates
Stock: Currently 0 available
Publisher: MCGRAW-HILL EDUCATION - EUROPE
Pub. date: 1 October, 2012
Pages: 624
Description: Filled with practical examples, this is a comprehensive reference on process reliability for semiconductor process and design engineers.
Synopsis: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependentdielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
Illustrations: Illustrations
Publication: US
Imprint: McGraw-Hill Professional
Returns: Returnable
Some other items by this author:
ADVANCED SEMICONDUCTOR DEVICE PHYSICS AND MODELING (HB)
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ON-CHIP ELECTRO-STATIC DISCHARGE (ESD) PROTECTION FOR RADIO-FREQUENCY INTEGRATED CIRCUITS (PB)
PRINCIPLES AND ANALYSIS OF AIGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS (HB)
SEMICONDUCTOR DEVICE PHYSICS AND SIMULATION (HB)
TEST STRUCTURE, MODELING AND CHARACTERIZATION OF CMOS-BASED RF DEVICES (HB)

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