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Item Details
Title:
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MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
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By: |
Peter Aaen, Jaime A. Pla, John C. Wood |
Format: |
Paperback |
List price:
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£76.99 |
Our price: |
£67.37 |
Discount: |
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You save:
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£9.62 |
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ISBN 10: |
0521336171 |
ISBN 13: |
9780521336178 |
Availability: |
Usually dispatched within 1-3 weeks.
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Stock: |
Currently 0 available |
Publisher: |
CAMBRIDGE UNIVERSITY PRESS |
Pub. date: |
19 May, 2011 |
Series: |
The Cambridge RF and Microwave Engineering Series |
Pages: |
380 |
Description: |
This book was the first to be devoted to the compact modeling of RF power FETs. |
Synopsis: |
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. |
Publication: |
UK |
Imprint: |
Cambridge University Press |
Returns: |
Returnable |
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Ramadan and Eid al-Fitr
A celebratory, inclusive and educational exploration of Ramadan and Eid al-Fitr for both children that celebrate and children who want to understand and appreciate their peers who do.
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