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Item Details
Title: HEAVILY-DOPED 2D-QUANTIZED STRUCTURES AND THE EINSTEIN RELATION
By: Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
Format: Paperback

List price: £109.99


We currently do not stock this item, please contact the publisher directly for further information.

ISBN 10: 331938127X
ISBN 13: 9783319381275
Publisher: SPRINGER INTERNATIONAL PUBLISHING AG
Pub. date: 3 August, 2016
Edition: Softcover reprint of the original 1st ed. 2015
Series: Springer Tracts in Modern Physics 260
Pages: 347
Synopsis: This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped (HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields.
Illustrations: 58 Illustrations, black and white; XL, 347 p. 58 illus.
Publication: Switzerland
Imprint: Springer International Publishing AG
Returns: Returnable
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DENSITY-OF-STATES FUNCTION AND RELATED APPLICATIONS IN QUANTIZED STRUCTURES: QUANTIZED STRUCTURES (HB)
DISPERSION RELATIONS IN HEAVILY-DOPED NANOSTRUCTURES (HB)
DISPERSION RELATIONS IN HEAVILY-DOPED NANOSTRUCTURES (PB)
EFFECTIVE ELECTRON MASS IN LOW-DIMENSIONAL SEMICONDUCTORS (HB)
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EINSTEIN RELATION IN COMPOUND SEMICONDUCTORS AND THEIR NANOSTRUCTURES (HB)
EINSTEIN RELATION IN COMPOUND SEMICONDUCTORS AND THEIR NANOSTRUCTURES (PB)
EINSTEIN'S PHOTOEMISSION (HB)
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ELASTIC CONSTANTS, HEAVILY DOPED LOW DIMENSIONAL MATERIALS (HB)
FOWLER-NORDHEIM FIELD EMISSION (HB)
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HEAVILY-DOPED 2D-QUANTIZED STRUCTURES AND THE EINSTEIN RELATION (HB)
HEISENBERG''S UNCERTAINTY PRINCIPLE AND THE ELECTRON STATISTICS IN QUANTIZED STRUCTURES
HEISENBERG''S UNCERTAINTY PRINCIPLE AND THE ELECTRON STATISTICS IN QUANTIZED STRUCTURES (HB)
MAGNETO THERMOELECTRIC POWER IN HEAVILY DOPED QUANTIZED STRUCTURES
MAGNETO THERMOELECTRIC POWER IN HEAVILY DOPED QUANTIZED STRUCTURES (HB)
PHOTOEMISSION FROM OPTOELECTRONIC MATERIALS AND THEIR NANOSTRUCTURES (HB)
PHOTOEMISSION FROM OPTOELECTRONIC MATERIALS AND THEIR NANOSTRUCTURES (PB)
QUANTUM EFFECTS, HEAVY DOPING, AND THE EFFECTIVE MASS
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THERMOELECTRIC POWER IN NANOSTRUCTURED MATERIALS (HB)
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