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Item Details
Title: FOWLER-NORDHEIM FIELD EMISSION
EFFECTS IN SEMICONDUCTOR NANOSTRUCTURES
By: Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
Format: Paperback

List price: £99.99


We currently do not stock this item, please contact the publisher directly for further information.

ISBN 10: 3642445152
ISBN 13: 9783642445156
Publisher: SPRINGER-VERLAG BERLIN AND HEIDELBERG GMBH & CO. KG
Pub. date: 22 February, 2014
Edition: 2012 ed.
Series: Springer Series in Solid-State Sciences 170
Pages: 338
Description: This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The book covers a wide range of different technologically important electronic compounds, and contains 200 open research problems.
Synopsis: This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
Illustrations: XXII, 338 p.
Publication: Germany
Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Returns: Returnable
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BASIC ELECTRONICS (PB)
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DENSITY-OF-STATES FUNCTION AND RELATED APPLICATIONS IN QUANTIZED STRUCTURES: QUANTIZED STRUCTURES (HB)
DISPERSION RELATIONS IN HEAVILY-DOPED NANOSTRUCTURES (HB)
DISPERSION RELATIONS IN HEAVILY-DOPED NANOSTRUCTURES (PB)
EFFECTIVE ELECTRON MASS IN LOW-DIMENSIONAL SEMICONDUCTORS (HB)
EFFECTIVE ELECTRON MASS IN LOW-DIMENSIONAL SEMICONDUCTORS (PB)
EINSTEIN RELATION IN COMPOUND SEMICONDUCTORS AND THEIR NANOSTRUCTURES (HB)
EINSTEIN RELATION IN COMPOUND SEMICONDUCTORS AND THEIR NANOSTRUCTURES (PB)
EINSTEIN'S PHOTOEMISSION (HB)
EINSTEIN'S PHOTOEMISSION (PB)
ELASTIC CONSTANTS, HEAVILY DOPED LOW DIMENSIONAL MATERIALS (HB)
FOWLER-NORDHEIM FIELD EMISSION (HB)
HEAVILY-DOPED 2D-QUANTIZED STRUCTURES AND THE EINSTEIN RELATION (HB)
HEAVILY-DOPED 2D-QUANTIZED STRUCTURES AND THE EINSTEIN RELATION (PB)
HEISENBERG''S UNCERTAINTY PRINCIPLE AND THE ELECTRON STATISTICS IN QUANTIZED STRUCTURES
HEISENBERG''S UNCERTAINTY PRINCIPLE AND THE ELECTRON STATISTICS IN QUANTIZED STRUCTURES (HB)
MAGNETO THERMOELECTRIC POWER IN HEAVILY DOPED QUANTIZED STRUCTURES
MAGNETO THERMOELECTRIC POWER IN HEAVILY DOPED QUANTIZED STRUCTURES (HB)
PHOTOEMISSION FROM OPTOELECTRONIC MATERIALS AND THEIR NANOSTRUCTURES (HB)
PHOTOEMISSION FROM OPTOELECTRONIC MATERIALS AND THEIR NANOSTRUCTURES (PB)
QUANTUM EFFECTS, HEAVY DOPING, AND THE EFFECTIVE MASS
QUANTUM EFFECTS, HEAVY DOPING, AND THE EFFECTIVE MASS (HB)
THERMOELECTRIC POWER IN NANOSTRUCTURED MATERIALS (HB)
THERMOELECTRIC POWER IN NANOSTRUCTURED MATERIALS (PB)

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